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| cy7c2168kv18/cy7c2170kv18 18-mbit ddr ii+ sram two-word burst architecture (2.5 cycl e read latency) with odt cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document number: 001-58923 rev. *f revised may 9, 2014 18-mbit ddr ii+ sram two-word burst architecture (2.5 cycle read latency) with odt features 18-mbit density (1 m 18, 512 k 36) 550-mhz clock for high bandwidth two-word burst for reducing address bus frequency double data rate (ddr) interfaces (data transferred at 1100 mhz) at 550 mhz available in 2.5 clock cycle latency two input clocks (k and k ) for precise ddr timing ? sram uses rising edges only echo clocks (cq and cq ) simplify data capture in high-speed systems data valid pin (qvld) to indicate valid data on the output on-die termination (odt) feature ? supported for d [x:0] , bws [x:0] , and k/k inputs synchronous internally self-timed writes ddr ii+ operates with 2.5 cycle read latency when doff is asserted high operates similar to ddr i device with one cycle read latency when doff is asserted low core v dd = 1.8 v 0.1 v; i/o v ddq = 1.4 v to v dd [1] ? supports both 1.5 v and 1.8 v i/o supply hstl inputs and variable drive hstl output buffers available in 165-ball fbga package (13 15 1.4 mm) cy7c2168kv18 offered in non pb-free packages and cy7c2170kv18 offered in both pb-free and non pb-free packages jtag 1149.1 compatible test access port phase locked loop (pll) for accurate data placement configurations with read cycle latency of 2.5 cycles: cy7c2168kv18 ? 1 m 18 cy7c2170kv18 ? 512 k 36 functional description the cy7c2168kv18, and cy7c2170kv18 are 1.8 v synchronous pipelined srams equipped with ddr ii+ architecture. the ddr ii+ consists of an sram core with advanced synchronous peripheral circuitry. addresses for read and write are latched on alternate rising edges of the input (k) clock. write data is registered on the rising edges of both k and k . read data is driven on the rising edges of k and k . each address location is associ ated with two 18-bit words (cy7c2168kv18), or 36-bit words (cy7c2170kv18) that burst sequentially into or out of the device. these devices have an odt feature supported for d [x:0] , bws [x:0] , and k/k inputs, which helps eliminate external termination resistors, reduce cost, reduce board area, and simplify board routing. asynchronous inputs include an output impedance matching input (zq). synchronous data outputs (q, sharing the same physical pins as the data inputs d) are tightly matched to the two output echo clocks cq/cq , eliminating the need for separately capturing data from each indivi dual ddr sram in the system design. all synchronous inputs pass through input registers controlled by the k or k input clocks. all data outputs pass through output registers controlled by the k or k input clocks. writes are conducted with on-chip synchron ous self-timed write circuitry. selection guide description 550 mhz 450 mhz 400 mhz unit maximum operating frequency 550 450 400 mhz maximum operating current 18 650 560 not offered ma 36 820 not offered 640 note 1. the cypress qdr ii+ devices surpass the q dr consortium specification and can support v ddq = 1.4 v to v dd .
cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 2 of 30 logic block diagram ? cy7c2168kv18 write reg write reg clk a (18:0) gen. k k control logic address register read add. decode read data reg. r/w output logic reg. reg. reg. 18 36 18 bws [1:0] v ref write add. decode 18 19 18 ld control r/w doff 512 k x 18 array 512 k x 18 array 18 dq [17:0] 18 cq cq qvld logic block diagram ? cy7c2170kv18 write reg write reg clk a (17:0) gen. k k control logic address register read add. decode read data reg. r/w output logic reg. reg. reg. 36 72 36 bws [3:0] v ref write add. decode 36 18 36 ld control r/w doff 256 k x 36 array 256 k x 36 array 36 dq [35:0] 36 cq cq qvld cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 3 of 30 contents pin configurations ........................................................... 4 pin definitions .................................................................. 5 functional overview ........................................................ 6 read operations ......................................................... 6 write operations ......................................................... 6 byte write operations ................................................. 7 ddr operation ............................................................ 7 depth expansion ......................................................... 7 programmable impedance ........ .............. ........... ......... 7 echo clocks .......... .............. .............. .............. ............ 7 valid data indicator (qvld) ........................................ 7 on-die termination (odt) .......................................... 7 pll .............................................................................. 7 application example ........................................................ 8 truth table ........................................................................ 9 write cycle descriptions ................................................. 9 write cycle descriptions ............................................... 10 ieee 1149.1 serial boundary sc an (jtag) ... ........... .... 11 disabling the jtag feature ...................................... 11 test access port ....................................................... 11 performing a tap re set ........................................... 11 tap registers ........................................................... 11 tap instruction set ................................................... 11 tap controller state diagram ....................................... 13 tap controller block diagram ...................................... 14 tap electrical characteristics ...................................... 14 tap ac switching characteristics ............................... 15 tap timing and test conditions .................................. 16 identification register definitions ................................ 17 scan register sizes ....................................................... 17 instruction codes ........................................................... 17 boundary scan order .................................................... 18 power up sequence in ddr ii+ sram ......................... 19 power up sequence ................................................. 19 pll constraints ......................................................... 19 maximum ratings ........................................................... 20 operating range ............................................................. 20 neutron soft error immunity ......................................... 20 electrical characteristics ............................................... 20 dc electrical characteristics ..................................... 20 ac electrical characteristics ..................................... 22 capacitance .................................................................... 22 thermal resistance ........................................................ 22 ac test loads and waveforms ..................................... 22 switching characteristics .............................................. 23 switching waveforms .................................................... 24 read/write/deselect sequence ............. ........... ........ 24 ordering information ...................................................... 25 ordering code definitions ..... .................................... 25 package diagram ............................................................ 26 acronyms ........................................................................ 27 document conventions ................................................. 27 units of measure ....................................................... 27 document history page ................................................. 28 sales, solutions, and legal information ...................... 30 worldwide sales and design s upport ......... .............. 30 products .................................................................... 30 psoc? solutions ...................................................... 30 cypress developer community ................................. 30 technical support ................. .................................... 30 cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 4 of 30 pin configurations the pin configuration for cy7c2168kv18, and cy7c2170kv18 follow. [2] figure 1. 165-ball fbga (13 15 1.4 mm) pinout cy7c2168kv18 (1 m 18) 1 2 3 4 5 6 7 8 9 10 11 a cq nc/72m a r/w bws 1 k nc/144m ld anc/36mcq b nc dq9 nc a nc/288m k bws 0 ancncdq8 c nc nc nc v ss ancav ss nc dq7 nc d nc nc dq10 v ss v ss v ss v ss v ss nc nc nc e nc nc dq11 v ddq v ss v ss v ss v ddq nc nc dq6 f nc dq12 nc v ddq v dd v ss v dd v ddq nc nc dq5 g nc nc dq13 v ddq v dd v ss v dd v ddq nc nc nc h doff v ref v ddq v ddq v dd v ss v dd v ddq v ddq v ref zq j nc nc nc v ddq v dd v ss v dd v ddq nc dq4 nc k nc nc dq14 v ddq v dd v ss v dd v ddq nc nc dq3 l nc dq15 nc v ddq v ss v ss v ss v ddq nc nc dq2 m nc nc nc v ss v ss v ss v ss v ss nc dq1 nc n nc nc dq16 v ss aaav ss nc nc nc p nc nc dq17 a a qvld a a nc nc dq0 r tdotckaaaodtaaatmstdi cy7c2170kv18 (512 k 36) 1 2 3 4 5 6 7 8 9 10 11 a cq nc/144m nc/36m r/w bws 2 k bws 1 ld anc/72mcq b nc dq27 dq18 a bws 3 kbws 0 ancncdq8 c nc nc dq28 v ss ancav ss nc dq17 dq7 d nc dq29 dq19 v ss v ss v ss v ss v ss nc nc dq16 e nc nc dq20 v ddq v ss v ss v ss v ddq nc dq15 dq6 f nc dq30 dq21 v ddq v dd v ss v dd v ddq nc nc dq5 g nc dq31 dq22 v ddq v dd v ss v dd v ddq nc nc dq14 h doff v ref v ddq v ddq v dd v ss v dd v ddq v ddq v ref zq j nc nc dq32 v ddq v dd v ss v dd v ddq nc dq13 dq4 k nc nc dq23 v ddq v dd v ss v dd v ddq nc dq12 dq3 l nc dq33 dq24 v ddq v ss v ss v ss v ddq nc nc dq2 m nc nc dq34 v ss v ss v ss v ss v ss nc dq11 dq1 n nc dq35 dq25 v ss aaav ss nc nc dq10 p nc nc dq26 a a qvld a a nc dq9 dq0 r tdotckaaaodtaaatmstdi note 2. nc/36, nc/72m, nc/144m, and nc/288m are not connected to the die and can be tied to any voltage level. cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 5 of 30 pin definitions pin name i/o pin description dq [x:0] input output- synchronous data input output signals . inputs are sampled on the rising edge of k and k clocks during valid write operations. these pins drive out the requested data when the read operation is active. valid data is driven out on the rising edge of both the k and k clocks during read operations. when read access is deselected, q [x:0] are automatically tri-stated. cy7c2168kv18 ? dq [17:0] cy7c2170kv18 ? dq [35:0] ld input- synchronous synchronous load . sampled on the rising edge of the k clock. this input is brought low when a bus cycle sequence is defined. this definition includes ad dress and read/write direction. all transactions operate on a burst of 2 data. ld must meet the setup and hold times around edge of k. bws 0 , bws 1 , bws 2 , bws 3 input- synchronous byte write select 0, 1, 2, and 3 ? active low . sampled on the rising edge of the k and k clocks during write operations. used to select which byte is wri tten into the device during the current portion of the write operations. bytes not written remain unaltered. cy7c2168kv18 ?? bws 0 controls d [8:0] and bws 1 controls d [17:9]. cy7c2170kv18 ?? bws 0 controls d [8:0] , bws 1 controls d [17:9] , bws 2 controls d [26:18] and bws 3 controls d [35:27] . all the byte write selects are sampled on the same edge as the data. deselecting a byte write select ignores the corresponding byte of data and it is not written into the device. a input- synchronous address inputs . sampled on the rising edge of the k clock during active read and write operations. these address inputs are multiplexed for both read and write operations. internally, the device is organized as 1 m 18 (2 arrays each of 512 k 18) for cy7c2168kv18, and 512 k 36 (2 arrays each of 256 k 36) for cy7c2170kv18. r/w input- synchronous synchronous read or write input . when ld is low, this input designates the access type (read when r/w is high, write when r/w is low) for loaded address. r/w must meet the setup and hold times around edge of k. qvld valid output indicator valid output indicator . the q valid indicates valid output dat a. qvld is edge aligned with cq and cq . odt [3] on-die termination input pin on-die termination input . this pin is used for on-die termination of the input signals. odt range selection is made during power up initialization. a low on this pin selects a low range that follows rq/3.33 for 175 ?? < rq < 350 ?? (where rq is the resistor tied to zq pin) ?? a high on this pin selects a high range that follows rq/1.66 for 175 ?? < rq < 250 ?? (where rq is the resistor tied to zq pin). when left floating, a high range termination value is selected by default. k input clock positive input clock input . the rising edge of k is used to capture synchronous inputs to the device and to drive out data through q [x:0] . all accesses are initiated on the rising edge of k. k input clock negative input clock input . k is used to capture synchronous data being presented to the device and to drive out data through q [x:0] . cq echo clock synchronous echo clock outputs . this is a free running clock and is synchronized to the input clock (k) of the ddr ii+. the timing for the echo clocks is shown in the switching characteristics on page 23 . cq echo clock synchronous echo clock outputs . this is a free running clock and is synchronized to the input clock (k ) of the ddr ii+. the timing for the echo clocks is shown in the switching characteristics on page 23 . zq input output impedance matching input . this input is used to tune the device outputs to the system data bus impedance. cq, cq , and q [x:0] output impedance are set to 0.2 rq, where rq is a resistor connected between zq and ground. alternatively, this pin can be connected directly to v ddq , which enables the minimum impedance mode. this pin ca nnot be connected directly to gnd or left unconnected. note 3. odt feature is supported for d [x:0] , bws [x:0] , and k/k inputs. cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 6 of 30 functional overview the cy7c2168kv18, and cy7c2170kv18 are synchronous pipelined burst srams equipped with a ddr interface, which operates with a read latency of two and half cycles when doff pin is tied high. when doff pin is set low or connected to v ss the device behaves in ddr i mode with a read latency of one clock cycle. accesses are initiated on the rising edge of the positive input clock (k). all synchronous input and output timing is referenced from the rising edge of t he input clocks (k and k ). all synchronous data inputs (d [x:0] ) pass through input registers controlled by the rising edge of the input clocks (k and k ). all synchronous data outputs (q [x:0] ) pass through output registers controlled by the rising edge of the input clocks (k and k ). all synchronous control (r/w , ld , bws [x:0] ) inputs pass through input registers controlled by the ri sing edge of the input clock (k). cy7c2168kv18 is described in the following sections. the same basic descriptions apply to cy7c2170kv18. read operations the cy7c2168kv18 is organized internally as two arrays of 512 k 18. accesses are completed in a burst of two sequential 18-bit data words. read operat ions are initiated by asserting r/w high and ld low at the rising edge of the positive input clock (k). the address presented to the address inputs is stored in the read address register. following the next two k clock rise, the corresponding 18-bit word of data from this address location is driven onto the q [17:0] using k as the output timing reference. on the subsequent rising edge of k, the next 18-bit data word is driven onto the q [17:0] . the requested data is valid 0.45 ns from the rising edge of the input clock (k and k ). to maintain the internal logic, each read access must be allowed to complete. read accesses can be initiated on every rising edge of the positive input clock (k). when read access is deselected, the cy7c2168kv18 first completes the pending read transactions. synchronous internal circuitry automatically tristates the output following the next rising edge of the negative input clock (k ). this enables for a transition between devices without the insert ion of wait states in a depth expanded memory. write operations write operations are init iated by asserting r/w low and ld low at the rising edge of the positive input clock (k). the address presented to address inputs is stored in the write address register. on the fo llowing k clock rise, the data presented to d [17:0] is latched and stored into the 18-bit write data register, provided bws [1:0] are both asserted active. on the subsequent rising edge of t he negative input clock (k ) the information presented to d [17:0] is also stored into the write data register, provided bws [1:0] are both asserted active. the 36 bits of data are then written into t he memory array at the specified location. write accesses can be initiated on every rising edge of the positive input clock (k). doing so pipelines the data flow such that 18 bits of data can be transferred into the device on every rising edge of the in put clocks (k and k ). when the write access is dese lected, the device ignores all inputs after the pending write operations have been completed. doff input pll turn off ? active low . connecting this pin to ground turns off the pll inside the device. the timing in the pll turned off operation differs from those listed in this data sheet. for normal operation, this pin can be connected to a pull up through a 10 k ? or less pull up resistor. the device behaves in ddr i mode when the pll is turned off. in this mode, the device can be operated at a frequency of up to 167 mhz with ddr i timing. tdo output tdo pin for jtag . tck input tck pin for jtag . tdi input tdi pin for jtag . tms input tms pin for jtag . nc n/a not connected to the die . can be tied to any voltage level. nc/36m input not connected to the die . can be tied to any voltage level. nc/72m input not connected to the die . can be tied to any voltage level. nc/144m input not connected to the die . can be tied to any voltage level. nc/288m input not connected to the die . can be tied to any voltage level. v ref input- reference reference voltage input . static input used to set the reference level for hstl inputs, outputs, and ac measurement points. v dd power supply power supply inputs to the core of the device . v ss ground ground for the device . v ddq power supply power supply inputs for the outputs of the device . pin definitions (continued) pin name i/o pin description cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 7 of 30 byte write operations byte write operations are supported by the cy7c2168kv18. a write operation is initiated as described in the write operations section. the bytes that are written are determined by bws 0 and bws 1 , which are sampled with each set of 18-bit data words. asserting the appropriate byte wr ite select input during the data portion of a write latches the dat a being presented and writes it into the device. deasserting the byte write select input during the data portion of a write enables the data stored in the device for that byte to remain unaltere d. this feature can be used to simplify read, modify, or writ e operations to a byte write operation. ddr operation the cy7c2168kv18 enables high-performance operation through high clock frequencies (achieved through pipelining) and ddr mode of operation. the cy7c2168kv18 requires two no operation (nop) cycle during tr ansition from a read to a write cycle. at higher frequencies, so me applications require third nop cycle to avoid contention. if a read occurs after a write cycle, address and data for the write are stored in registers. the writ e information is stored because the sram cannot perform the last word write to the array without conflicting with the read. the data st ays in this register until the next write cycle occurs. on the fi rst write cycle after the read(s), the stored data from the earlie r write is written into the sram array. this is called a posted write. if a read is performed on the same address on which a write is performed in the previous cycl e, the sram reads out the most current data. the sram does this by bypassing the memory array and reading the data from the registers. depth expansion depth expansion requir es replicating the ld control signal for each bank. all other control signals can be common between banks as appropriate. programmable impedance an external resistor, rq, must be connected between the zq pin on the sram and v ss to allow the sram to adjust its output driver impedance. the value of rq must be 5 the value of the intended line impedance driven by the sram. the allowable range of rq to guarantee impedance matching with a tolerance of 15% is between 175 ? and 350 ? , with v ddq =1.5 v. the output impedance is adjusted every 1024 cycles upon power up to account for drifts in supply voltage and temperature. echo clocks echo clocks are provided on the ddr ii+ to simplify data capture on high-speed systems. two echo clocks are generated by the ddr ii+. cq is referenced with respect to k and cq is referenced with respect to k . these are free-running clocks and are synchronized to the input clock of the ddr ii+. the timing for the echo clocks is shown in the switching characteristics on page 23 . valid data indicator (qvld) qvld is provided on the ddr ii+ to simplify data capture on high speed systems. the qvld is generated by the ddr ii+ device along with data output. this signal is also edge aligned with the echo clock and follows the timing of any data pin. this signal is asserted half a cycle before valid data arrives. on-die termination (odt) these devices have an on-die termination feature for data inputs (d [x:0] ), byte write selects (bws [x:0] ), and input clocks (k and k ). the termination resistors are integrated within the chip. the odt range selection is enabled through ball r6 (odt pin). the odt termination tracks value of rq where rq is the resistor tied to the zq pin. odt range selection is made during power up initialization. a low on this pin selects a low range that follows rq/3.33 for 175 ?? < rq < 350 ?? (where rq is the resistor tied to zq pin) ?? a high on this pin selects a high range that follows rq/1.66 for 175 ?? < rq < 250 ?? (where rq is the resistor tied to zq pin). when left floating, a high range termination value is selected by default. for a detailed description on the odt implementation, refer to the application note, on-die termination for qdrii+/ddrii+ srams . pll these chips use a pll that is designed to function between 120 mhz and the specified maximum clock frequency. during power up, when the doff is tied high, the pll is locked after 20 ? s of stable clock. the pll can also be reset by slowing or stopping the input clock k and k for a minimum of 30 ns. however, it is not necessary to reset the pll to lock to the desired frequency. the p ll automatically locks 20 ? s after a stable clock is presented. the pll may be disabled by applying ground to the doff pin. when the pll is turned off, the device behaves in ddr i mode (with one cycle latency and a longer access time). for information, refer to the application note, pll considerations in q drii/ddrii/q drii+/ddrii+ . cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 8 of 30 application example figure 2 shows two ddr ii+ used in an application. figure 2. application example (width expansion) dq[x:0] ald r/w bws kk zq sram#1 cq/cq dq[x:0] ald bws kk zq sram#2 cq/cq dq[2x:0] address bws clkin1/clkin1 clkin2/clkin2 source k source k fpga / asic rq rq r/w ld r/w cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 9 of 30 truth table the truth table for the cy7c2168kv18, and cy7c2170kv18 follow. [4, 5, 6, 7, 8, 9] operation k ld r/w dq dq write cycle: load address; wait one cycle; input write data on consecutive k and k rising edges. l?h l l d(a) at k(t + 1) ? d(a+1) at k (t + 1) ? read cycle: (2.5 cycle latency) load address; wait two and half cycles; read data on consecutive k and k rising edges. l?h l h q(a) at k (t + 2) ? q(a+1) at k(t + 3) ? nop: no operation l?h h x high z high z standby: clock stopped stopped x x previous state previous state write cycle descriptions the write cycle description tabl e for cy7c2168kv18 follows. [4, 10] bws 0 bws 1 k k comments l l l?h ? during the data portion of a write sequence ? cy7c2168kv18 ?? both bytes (d [17:0] ) are written into the device. l l ? l?h during the data portion of a write sequence ? cy7c2168kv18 ?? both bytes (d [17:0] ) are written into the device. l h l?h ? during the data portion of a write sequence ? cy7c2168kv18 ?? only the lower byte (d [8:0] ) is written into the device, d [17:9] remains unaltered. l h ? l?h during the data portion of a write sequence ? cy7c2168kv18 ?? only the lower byte (d [8:0] ) is written into the device, d [17:9] remains unaltered. h l l?h ? during the data portion of a write sequence ? cy7c2168kv18 ?? only the upper byte (d [17:9] ) is written into the device, d [8:0] remains unaltered. h l ? l?h during the data portion of a write sequence ? cy7c2168kv18 ?? only the upper byte (d [17:9] ) is written into the device, d [8:0] remains unaltered. h h l?h ? no data is written into the devices during this portion of a write operation. h h ? l?h no data is written into the devices during this portion of a write operation. notes 4. x = ?don?t care?, h = logic high, l = logic low, ? ? represents rising edge. 5. device powers up deselected with the outputs in a tristate condition. 6. ?a? represents address location latched by the devices when tr ansaction was initiated. a + 1 represents the address sequence in the burst. 7. ?t? represents the cycle at which a read/write operation is star ted. t + 1 and t + 2 are the fi rst and second clock cycles su cceeding the ?t? clock cycle. 8. data inputs are registered at k and k rising edges. data outputs are delivered on k and k rising edges as well. 9. it is recommended that k = k = high when clock is stopped. this is not essential, but permi ts most rapid restart by overcoming transmission line charging s ymmetrically. 10. is based on a write cycle that was initiated in accordance with truth table . bws 0 , bws 1 , bws 2 , and bws 3 can be altered on different portions of a write cycle, as long as the setup and hold requirements are achieved. cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 10 of 30 write cycle descriptions the write cycle description ta ble for cy7c2170kv18 follows. [11, 12] bws 0 bws 1 bws 2 bws 3 k k comments l l l l l?h ? during the data portion of a write sequence, all four bytes (d [35:0] ) are written into the device. l l l l ? l?h during the data portion of a write sequence, all four bytes (d [35:0] ) are written into the device. l h h h l?h ? during the data portion of a write sequence, only the lower byte (d [8:0] ) is written into the device. d [35:9] remains unaltered. l h h h ? l?h during the data portion of a write sequence, only the lower byte (d [8:0] ) is written into the device. d [35:9] remains unaltered. h l h h l?h ? during the data portion of a write sequence, only the byte (d [17:9] ) is written into the device. d [8:0] and d [35:18] remains unaltered. h l h h ? l?h during the data portion of a write sequence, only the byte (d [17:9] ) is written into the device. d [8:0] and d [35:18] remains unaltered. h h l h l?h ? during the data portion of a write sequence, only the byte (d [26:18] ) is written into the device. d [17:0] and d [35:27] remains unaltered. h h l h ? l?h during the data portion of a write sequence, only the byte (d [26:18] ) is written into the device. d [17:0] and d [35:27] remains unaltered. h h h l l?h ? during the data portion of a write sequence, only the byte (d [35:27] ) is written into the device. d [26:0] remains unaltered. h h h l ? l?h during the data portion of a write sequence, only the byte (d [35:27] ) is written into the device. d [26:0] remains unaltered. h h h h l?h ? no data is written into the device during this portion of a write operation. h h h h ? l?h no data is written into the device during this portion of a write operation. notes 11. x = ?don?t care?, h = logic high, l = logic low, ? ? represents rising edge. 12. is based on a write cycle that was initiated in accordance with truth table on page 9 . bws 0 , bws 1 , bws 2 , and bws 3 can be altered on different portions of a write cycle, as long as the setup and hold requirements are achieved. cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 11 of 30 ieee 1149.1 serial boundary scan (jtag) these srams incorporate a serial boundary scan test access port (tap) in the fbga package. th is part is fully compliant with ieee standard #1149. 1-2001. the tap operates using jedec standard 1.8 v i/o logic levels. disabling the jtag feature it is possible to operate the sram without using the jtag feature. to disable the tap co ntroller, tck must be tied low (v ss ) to prevent clocking of the device. tdi and tms are internally pulled up and may be unconnected. they may alternatively be connected to v dd through a pull up resistor. tdo must be left unconnected. upon power up, the device comes up in a reset state, which does not interfere with the operation of the device. test access port test clock the test clock is used only with the tap controller. all inputs are captured on the rising edge of tc k. all outputs are driven from the falling edge of tck. test mode select (tms) the tms input is used to give commands to the tap controller and is sampled on the rising edge of tck. this pin may be left unconnected if the tap is not used. the pin is pulled up internally, resulting in a logic high level. test data-in (tdi) the tdi pin is used to serially input information into the registers and can be connected to the input of any of the registers. the register between tdi and tdo is chosen by the instruction that is loaded into the tap instruction register. for information on loading the instruction register, see tap controller state diagram on page 13 . tdi is internally pulled up and can be unconnected if the tap is unus ed in an application. tdi is connected to the most signific ant bit (msb) on any register. test data-out (tdo) the tdo output pin is used to serially clock data out from the registers. the output is active, depending upon the current state of the tap state machine (see instruction codes on page 17 ). the output changes on the falling edge of tck. tdo is connected to the least significant bit (lsb) of any register. performing a tap reset a reset is performed by forcing tms high (v dd ) for five rising edges of tck. this reset does not affect the operation of the sram and can be performed while the sram is operating. at power up, the tap is reset intern ally to ensure that tdo comes up in a high z state. tap registers registers are connected between the tdi and tdo pins to scan the data in and out of the sram te st circuitry. only one register can be selected at a time through the instruction registers. data is serially loaded into the tdi pin on the rising edge of tck. data is output on the tdo pin on the falling edge of tck. instruction register three-bit instructions can be serially loaded into the instruction register. this register is loaded when it is placed between the tdi and tdo pins, as shown in tap controller block diagram on page 14 . upon power up, the instruction register is loaded with the idcode instruction. it is also loaded with the idcode instruction if the controller is pl aced in a reset state, as described in the previous section. when the tap controller is in th e capture-ir state, the two least significant bits are loaded with a binary ?01? pattern to allow for fault isolation of the board level serial test path. bypass register to save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. the bypass register is a single-bit register that can be placed between tdi and tdo pins. this enables shifting of data through the sram with minimal delay. the bypass register is set low (v ss ) when the bypass instruction is executed. boundary scan register the boundary scan register is connected to all of the input and output pins on the sram. several no connect (nc) pins are also included in the scan register to reserve pins for higher density devices. the boundary scan register is loaded with the contents of the ram input and output ring when the tap controller is in the capture-dr state and is then placed between the tdi and tdo pins when the controller is moved to the shift-dr state. the extest, sample/preload, and sa mple z instructions can be used to capture the contents of the input and output ring. boundary scan order on page 18 shows the order in which the bits are connected. each bit corresponds to one of the bumps on the sram package. the msb of the register is connected to tdi, and the lsb is connected to tdo. identification (id) register the id register is loaded with a vendor-specific, 32-bit code during the capture-dr state when the idcode command is loaded in the instruction register . the idcode is hardwired into the sram and can be shifted out when the tap controller is in the shift-dr state. the id regist er has a vendor code and other information described in identification register definitions on page 17 . tap instruction set eight different instructions ar e possible with the three-bit instruction register. all co mbinations are listed in instruction codes on page 17 . three of these instru ctions are listed as reserved and must not be used. the other five instructions are described in this section in detail. instructions are loaded into the tap controller during the shift-ir state when the instruction register is placed between tdi and tdo. during this state, instructions are shifted through the instruction register through the tdi and tdo pins. to execute the instruction after it is shift ed in, the tap controller must be moved into the update-ir state. cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 12 of 30 idcode the idcode instruction loads a vendor-specific, 32-bit code into the instruction register. it also places the instruction register between the tdi and tdo pins and shifts the idcode out of the device when the tap controller enters the shift-dr state. the idcode instruction is loaded into the instruction register at power up or whenever the tap controller is supplied a test-logic-reset state. sample z the sample z instruction connects the boundary scan register between the tdi and tdo pins when the tap controller is in a shift-dr state. the sample z command puts the output bus into a high z state until the next command is supplied during the update ir state. sample/preload sample/preload is a 1149.1 mandatory instruction. when the sample/preload instructions are loaded into the instruction register and the tap controller is in the capture-dr state, a snapshot of data on the input and output pins is captured in the boundary scan register. the user must be aware that t he tap controller clock can only operate at a frequency up to 20 mhz, while the sram clock operates more than an order of magnitude faster. because there is a large difference in the clock frequencies, it is possible that during the capture-dr state, an input or output undergoes a transition. the tap may then try to capture a signal while in transition (metastable state). this does not harm the device, but there is no guarantee as to the value that is captured. repeatable results may not be possible. to guarantee that the boundary scan register captures the correct value of a signal, the sram signal must be stabilized long enough to meet the tap controller's capture setup plus hold times (t cs and t ch ). the sram clock input might not be captured correctly if there is no way in a de sign to stop (or slow) the clock during a sample/preload instructi on. if this is an issue, it is still possible to capture all other signals and simply ignore the value of the ck and ck captured in the boundary scan register. after the data is captured, it is possible to shift out the data by putting the tap into the shift-dr state. this places the boundary scan register between the tdi and tdo pins. preload places an initial data pattern at the latched parallel outputs of the boundary scan regi ster cells before the selection of another boundary scan test operation. the shifting of data for the sample and preload phases can occur concurrently when requir ed, that is, while the data captured is shifted out, the pr eloaded data can be shifted in. bypass when the bypass instruction is loaded in the instruction register and the tap is placed in a shift- dr state, the bypass register is placed between the tdi and tdo pins. the advantage of the bypass instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. extest the extest instruction drives the preloaded data out through the system output pins. this instruction also connects the boundary scan register for serial access between the tdi and tdo in the shift-dr controller state. extest output bus tristate ieee standard 1149.1 mandates that the tap controller be able to put the output bus into a tristate mode. the boundary scan register has a special bit located at bit #47. when this scan cell, called the ?extest output bus tristate,? is latched into the preload register during the update-dr state in the tap controller, it directly controls the state of the output (q-bus) pins, when the extest is entered as the current instruction. when high, it enables the output buffers to drive the output bus. when low, this bi t places the output bus into a high z condition. this bit can be set by entering the sample/preload or extest command, and then shifting the desired bit into that cell, during the shift-dr state. during update-dr, the value loaded into that shift-register cell latc hes into the preload register. when the extest instruction is entered, this bit directly controls the output q-bus pins. note that this bit is preset high to enable the output when the device is power ed up, and also when the tap controller is in the test-logic-reset state. reserved these instructions are not im plemented but are reserved for future use. do not use these instructions. cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 13 of 30 tap controller state diagram the state diagram for the tap controller follows. [13] test-logic reset test-logic/ idle select dr-scan capture-dr shift-dr exit1-dr pause-dr exit2-dr update-dr 1 0 1 1 0 1 0 1 0 0 0 1 1 1 0 1 0 1 0 0 0 1 0 1 1 0 1 0 0 1 1 0 select ir-scan capture-ir shift-ir exit1-ir pause-ir exit2-ir update-ir note 13. the 0/1 next to each state represents the value at tms at the rising edge of tck. cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 14 of 30 tap controller block diagram 0 0 1 2 . . 29 30 31 boundary scan register identification register 0 1 2 . . . . 106 0 1 2 instruction register bypass register selection circuitry selection circuitry tap controller tdi tdo tck tms tap electrical characteristics over the operating range parameter [14, 15, 16] description test conditions min max unit v oh1 output high voltage i oh = ?? 2.0 ma 1.4 ? v v oh2 output high voltage i oh = ?? 100 ? a1.6?v v ol1 output low voltage i ol = 2.0 ma ? 0.4 v v ol2 output low voltage i ol = 100 ? a?0.2v v ih input high voltage ? 0.65 v dd v dd + 0.3 v v il input low voltage ? ?0.3 0.35 v dd v i x input and output load current gnd ? v i ? v dd ?5 5 ? a notes 14. these characteristics pertain to the tap inputs (tms, tck, tdi and tdo). parallel load levels are specified in the electrical characteristics on page 20 . 15. overshoot: v ih(ac) < v ddq + 0.3 v (pulse width less than t cyc /2), undershoot: v il(ac) > ? 0.3 v (pulse width less than t cyc /2). 16. all voltage referenced to ground. cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 15 of 30 tap ac switchi ng characteristics over the operating range parameter [17, 18] description min max unit t tcyc tck clock cycle time 50 ? ns t tf tck clock frequency ? 20 mhz t th tck clock high 20 ? ns t tl tck clock low 20 ? ns setup times t tmss tms setup to tck clock rise 5 ? ns t tdis tdi setup to tck clock rise 5 ? ns t cs capture setup to tck rise 5 ? ns hold times t tmsh tms hold after tck clock rise 5 ? ns t tdih tdi hold after clock rise 5 ? ns t ch capture hold after clock rise 5 ? ns output times t tdov tck clock low to tdo valid ? 10 ns t tdox tck clock low to tdo invalid 0? ns notes 17. t cs and t ch refer to the setup and hold time requirements of latching data from the boundary scan register. 18. test conditions are specified using the load in tap ac test conditions. t r /t f = 1 ns. cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 16 of 30 tap timing and test conditions figure 3 shows the tap timing and test conditions. [19] figure 3. tap timing and test conditions t tl t th (a) tdo c l = 20 pf z 0 = 50 ? gnd 0.9 v 50 ? 1.8 v 0 v all input pulses 0.9 v test clock test mode select tck tms test data in tdi test data out t tcyc t tmsh t tmss t tdis t tdih t tdov t tdox tdo note 19. test conditions are specified using the load in tap ac test conditions. t r /t f = 1 ns. cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 17 of 30 identification regi ster definitions instruction field value description cy7c2168kv18 cy7c2170kv18 revision number (31:29) 000 000 version number. cypress device id (28:12) 11010111000010101 11010111000100101 defines the type of sram. cypress jedec id (11:1) 00000110100 00000110100 allows unique identification of sram vendor. id register presence (0) 1 1 indicates the presence of an id register. scan register sizes register name bit size instruction 3 bypass 1 id 32 boundary scan 107 instruction codes instruction code description extest 000 captures the input and output ring contents. idcode 001 loads the id register with the vendor id code and places the register between tdi and tdo. this operation does not affect sram operation. sample z 010 captures the input and output contents. places the boundary scan register between tdi and tdo. forces all sram output drivers to a high z state. reserved 011 do not use: this instruct ion is reserved for future use. sample/preload 100 captures the input a nd output ring contents. places the boundary scan register between tdi and tdo. does not affect the sram operation. reserved 101 do not use: this instruct ion is reserved for future use. reserved 110 do not use: this instruct ion is reserved for future use. bypass 111 places the bypass register between tdi and tdo. this operation does not affect sram operation. cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 18 of 30 boundary scan order bit # bump id bit # bump id bit # bump id bit # bump id 0 6r 28 10g 56 6a 84 2j 16p299g575b853k 2 6n 30 11f 58 5a 86 3j 3 7p 31 11g 59 4a 87 2k 47n 329f 605c 881k 5 7r 33 10f 61 4b 89 2l 6 8r 34 11e 62 3a 90 3l 7 8p 35 10e 63 1h 91 1m 8 9r 36 10d 64 1a 92 1l 9 11p 37 9e 65 2b 93 3n 10 10p 38 10c 66 3b 94 3m 11 10n 39 11d 67 1c 95 1n 12 9p 40 9c 68 1b 96 2m 13 10m 41 9d 69 3d 97 3p 14 11n 42 11b 70 3c 98 2n 15 9m 43 11c 71 1d 99 2p 16 9n 44 9b 72 2c 100 1p 17 11l 45 10b 73 3e 101 3r 18 11m 46 11a 74 2d 102 4r 19 9l 47 internal 75 2e 103 4p 20 10l 48 9a 76 1e 104 5p 21 11k 49 8b 77 2f 105 5n 22 10k 50 7c 78 3f 106 5r 23 9j 51 6c 79 1g 24 9k 52 8a 80 1f 25 10j 53 7a 81 3g 26 11j 54 7b 82 2g 27 11h 55 6b 83 1j cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 19 of 30 power up sequence in ddr ii+ sram ddr ii+ srams must be powered up and initialized in a predefined manner to prevent undefined operations. power up sequence apply power and drive doff either high or low (all other inputs can be high or low). ? apply v dd before v ddq . ? apply v ddq before v ref or at the same time as v ref . ? drive doff high. provide stable doff (high), power and clock (k, k ) for 20 ? s to lock the pll. pll constraints pll uses k clock as its synchronizing input. the input must have low phase jitter, which is specified as t kc var . the pll functions at frequencies down to 120 mhz. if the input clock is unstable and the pll is enabled, then the pll may lock onto an incorrect frequency, causing unstable sram behavior. to avoid this, provide 20 ? s of stable clock to relock to the desired clock frequency. figure 4. power up waveforms > 20 s stable clock start normal operation doff stabl e (< +/- 0.1v dc per 50ns ) fix high (or tie to v ddq ) k k ddq dd v v / ddq dd v v / clock start ( clock starts after stable ) ddq dd v v / ~ ~ ~ ~ unstable clock cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 20 of 30 maximum ratings exceeding maximum ratings may impair the useful life of the device. these user guidelines are not tested. storage temperature .................................?65 c to +150 c ambient temperature with power applied ....................................?55 c to +125 c supply voltage on v dd relative to gnd .......?0.5 v to +2.9 v supply voltage on v ddq relative to gnd ...... ?0.5 v to +v dd dc applied to outputs in high z ........?0.5 v to v ddq + 0.3 v dc input voltage [20] ........................... ?0.5 v to v dd + 0.3 v current into outputs (low) ........................................ 20 ma static discharge voltage (mil-std-883, m 3015) ......................................... > 2,001 v latch-up current .................................................... > 200 ma operating range range ambient temperature (t a ) v dd [22] v ddq [22] commercial 0 c to +70 c 1.8 0.1 v 1.4 v to v dd neutron soft error immunity parameter description test conditions typ max* unit lsbu logical single-bit upsets 25 c 197 216 fit/m b lmbu logical multi-bit upsets 25 c 0 0.01 fit/m b sel single event latch-up 85 c 0 0.1 fit/d ev * no lmbu or sel events occurred during testing ; this column represents a statistical ? 2 , 95% confidence limit calculation. for more details refer to application note an54908 ?accelerated neutron ser testing and calculation of terrestrial failure rates? . electrical characteristics over the operating range dc electrical characteristics over the operating range parameter [21] description test conditions min typ max unit v dd power supply voltage ? 1.7 1.8 1.9 v v ddq i/o supply voltage ? 1.4 1.5 v dd v v oh output high voltage note 23 v ddq /2 ? 0.12 ? v ddq /2 + 0.12 v v ol output low voltage note 24 v ddq /2 ? 0.12 ? v ddq /2 + 0.12 v v oh(low) output high voltage i oh = ?? 0.1 ma, nominal impedance v ddq ? 0.2 ? v ddq v v ol(low) output low voltage i ol = 0.1 ma, nominal impedance v ss ?0.2 v v ih input high voltage ? v ref + 0.1 ? v ddq + 0.15 v v il input low voltage ? ?0.15 ? v ref ? 0.1 v i x input leakage current gnd ? v i ? v ddq ? 2? 2 ? a i oz output leakage current gnd ? v i ? v ddq, output disabled ? 2? 2 ? a v ref input reference voltage [25] typical value = 0.75 v 0.68 0.75 0.95 v notes 20. overshoot: v ih(ac) < v ddq + 0.3 v (pulse width less than t cyc /2), undershoot: v il(ac) > ? 0.3 v (pulse width less than t cyc /2). 21. all voltage referenced to ground. 22. power up: assumes a linear ramp from 0 v to v dd(min) within 200 ms. during this time v ih < v dd and v ddq < v dd . 23. outputs are impedance controlled. i oh = -(v ddq /2)/(rq/5) for values of 175 ? < rq < 350 ? . 24. outputs are impedance controlled. i ol = (v ddq /2)/(rq/5) for values of 175 ? < rq < 350 ? . 25. v ref(min) = 0.68 v or 0.46 v ddq , whichever is larger, v ref(max) = 0.95 v or 0.54 v ddq , whichever is smaller. cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 21 of 30 i dd [26] v dd operating supply v dd = max, i out = 0 ma, f = f max = 1/t cyc 550 mhz ( 18) ? ? 650 ma ( 36) ? ? 820 450 mhz ( 18) ? ? 560 ma 400 mhz ( 36) ? ? 640 ma i sb1 automatic power down current max v dd , both ports deselected, v in ? v ih or v in ? v il , f = f max = 1/t cyc , inputs static 550 mhz ( 18) ? ? 340 ma ( 36) ? ? 340 ma 450 mhz ( 18) ? ? 310 ma 400 mhz ( 36) ? ? 290 ma electrical characteristics (continued) over the operating range dc electrical characteristics (continued) over the operating range parameter [21] description test conditions min typ max unit note 26. the operation current is calculated with 50% read cycle and 50% write cycle. cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 22 of 30 ac electrical characteristics over the operating range parameter [27] description test conditions min typ max unit v ih input high voltage v ref + 0.2 ? v ddq + 0.24 v v il input low voltage ?0.24 ? v ref ? 0.2 v capacitance parameter [28] description test conditions max unit c in input capacitance t a = 25 ? c, f = 1 mhz, v dd = 1.8 v, v ddq = 1.5 v 4 pf c o output capacitance 4pf thermal resistance parameter [28] description test conditions 165-ball fbga package unit ? ja (0 m/s) thermal resistance (junction to ambient) socketed on a 170 220 2.35 mm, eight-layer printed circuit board 18.96 c/w ? ja (1 m/s) 17.89 c/w ? ja (3 m/s) 17.12 c/w ? jb thermal resistance (junction to board) 15.94 c/w ? jc thermal resistance (junction to case) 5.79 c/w ac test loads and waveforms figure 5. ac test loads and waveforms 1.25 v 0.25 v r = 50 ? 5pf including jig and scope all input pulses device r l = 50 ? z 0 = 50 ? v ref = 0.75 v v ref = 0.75 v [29] 0.75 v under te s t 0.75 v device under te s t output 0.75 v v ref v ref output zq zq (a) slew rate = 2 v/ns rq = 250 ? (b) rq = 250 ? 27. overshoot: v ih(ac) < v ddq + 0.3 v (pulse width less than t cyc /2), undershoot: v il(ac) > ? 0.3 v (pulse width less than t cyc /2). 28. tested initially and after any design or proc ess change that may affect these parameters. 29. unless otherwise noted, test conditions assume signal transi tion time of 2 v/ns, timing reference levels of 0.75 v, v ref = 0.75 v, rq = 250 ? , v ddq = 1.5 v, input pulse levels of 0.25 v to 1.25 v, and output loading of the specified i ol /i oh and load capacitance shown in (a) of figure 5 . cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 23 of 30 switching characteristics over the operating range parameters [30, 31] description 550 mhz 450 mhz 400 mhz unit cypress pa- rameter consortium parameter min max min max min max t power v dd (typical) to the first access [32] 1?1?1?ms t cyc t khkh k clock cycle time 1.81 8.4 2.2 8.4 2.5 8.4 ns t kh t khkl input clock (k/k ) high 0.4?0.4?0.4? ns t kl t klkh input clock (k/k ) low 0.4 ? 0.4 ? 0.4 ? ns t khk h t khk h k clock rise to k clock rise (rising edge to rising edge) 0.77 ? 0.94 ? 1.06 ? ns setup times t sa t avkh address setup to k clock rise 0.23 ? 0.275 ? 0.4 ? ns t sc t ivkh control setup to k clock rise (ld , r/w ) 0.23 ? 0.275 ? 0.4 ? ns t scddr t ivkh double data rate control setup to clock (k/k ) rise (bws 0 , bws 1 , bws 2 , bws 3 ) 0.18 ? 0.22 ? 0.28 ? ns t sd t dvkh d [x:0] setup to clock (k/k ) rise 0.18 ? 0.22 ? 0.28 ? ns hold times t ha t khax address hold after k clock rise 0.23 ? 0.275 ? 0.4 ? ns t hc t khix control hold after k clock rise (ld , r/w ) 0.23 ? 0.275 ? 0.4 ? ns t hcddr t khix double data rate control hold after clock (k/k ) rise (bws 0 , bws 1 , bws 2 , bws 3 ) 0.18 ? 0.22 ? 0.28 ? ns t hd t khdx d [x:0] hold after clock (k/k ) rise 0.18 ? 0.22 ? 0.28 ? ns output times t co t chqv k/k clock rise to data valid ? 0.45 ? 0.45 ? 0.45 ns t doh t chqx data output hold after output k/k clock rise (active to active) ?0.45 ? ?0.45 ? ?0.45 ? ns t ccqo t chcqv k/k clock rise to echo cl ock valid ? 0.45 ? 0.45 ? 0.45 ns t cqoh t chcqx echo clock hold after k/k clock rise ?0.45 ? ?0.45 ? ?0.45 ? ns t cqd t cqhqv echo clock high to data valid ? 0.15 ? 0.15 ? 0.20 ns t cqdoh t cqhqx echo clock high to data invalid ?0.15 ? ?0.15 ? ?0.20 ? ns t cqh t cqhcql output clock (cq/cq ) high [33] 0.655?0.85?1.00? ns t cqhcq h t cqhcq h cq clock rise to cq clock rise (rising edge to rising edge) [33] 0.655?0.85?1.00? ns t chz t chqz clock (k/k ) rise to high z (active to high z) [34, 35] ? 0.45 ? 0.45 ? 0.45 ns t clz t chqx1 clock (k/k ) rise to low z [34, 35] ?0.45 ? ?0.45 ? ?0.45 ? ns t qvld t cqhqvld echo clock high to qvld valid [36] ?0.15 0.15 ?0.15 0.15 ?0.20 0.20 ns pll timing t kc var t kc var clock phase jitter ? 0.15 ? 0.15 ? 0.20 ns t kc lock t kc lock pll lock time (k) 20?20?20? ? s t kc reset t kc reset k static to pll reset [37] 30?30?30?ns notes 30. unless otherwise noted, test conditions assume signal transit ion time of 2 v/ns, timing reference levels of 0.75 v, v ref = 0.75 v, rq = 250 ? , v ddq = 1.5 v, input pulse levels of 0.25 v to 1.25 v, and output loading of the specified i ol /i oh and load capacitance shown in (a) of figure 5 on page 22 . 31. when a part with a maximum frequency above 400 mhz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is being operated and outputs data with the output timings of that frequency range. 32. this part has an internal voltage regulator; t power is the time that the power is supplied above v dd min initially before a read or write operation can be initiated. 33. these parameters are extrapolated from the input timing parameters (t cyc /2 ? 250 ps, where 250 ps is the internal jitter). these parameters are only guaranteed by design and are not tested in production. 34. t chz , t clz are specified with a load capacitance of 5 pf as in (b) of figure 5 on page 22 . transition is measured ? 100 mv from steady-state voltage. 35. at any voltage and temperature t chz is less than t clz and t chz less than t co . 36. t qvld specification is applicable for both rising and falling edges of qvld signal. 37. hold to >v ih or cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 25 of 30 ordering information the following table contains only the parts that are currently av ailable. if you do not see what you are looking for, contact y our local sales representative. for more informa tion, visit the cypress website at www.cypress.com and refer to the product summary page at http://www.cypre ss.com/products cypress maintains a worldwide network of offices, solution cent ers, manufacturer?s representativ es and distributors. to find th e office closest to you, visit us at http://www.cypress.com /go/datasheet/offices. ordering code definitions speed (mhz) ordering code package diagram package type operating range 550 CY7C2168KV18-550BZC 51-85180 165-ball fbga (13 15 1.4 mm) commercial cy7c2170kv18-550bzxc 165-ball fbga (13 15 1.4 mm) pb-free 450 cy7c2168kv18-450bzc 165-ball fbga (13 15 1.4 mm) 400 cy7c2170kv18-400bzc cy7c2170kv18-400bzxc 165-ball fbga (13 15 1.4 mm) pb-free temperature range: c = commercial = 0 ? c to +70 ? c x = pb-free; x absent = leaded package type: bz = 165-ball fbga speed grade: xxx = 550 mhz or 450 mhz or 400 mhz v18 = 1.8 v v dd process technology k = 65 nm part identifier: 21xx = 2168 or 2170 technology code: c = cmos marketing code: 7 = sram company id: cy = cypress cy 21xx k - xxx bz x v18 c c 7 cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 26 of 30 package diagram figure 7. 165-ball fbga (13 15 1.4 mm) bb165d/bw 165d (0.5 ball diameter) package outline, 51-85180 51-85180 *f cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 27 of 30 acronyms document conventions units of measure acronym description ddr double data rate eia electronic industries alliance fbga fine-pitch ball grid array hstl high-speed transceiver logic i/o input/output jedec joint electron devices engineering council jtag joint test action group lsb least significant bit lmbu logical multiple bit upset lsbu logical single bit upset msb most significant bit odt on-die termination pll phase locked loop qdr quad data rate sel single event latch-up sram static random access memory tck test clock tdi test data-in tdo test data-out tms test mode select symbol unit of measure c degree celsius mhz megahertz a microampere s microsecond ma milliampere mm millimeter ms millisecond mv millivolt ns nanosecond ? ohm % percent pf picofarad vvolt wwatt cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 28 of 30 document history page document title: cy7c2168kv18/cy7c2170kv 18, 18-mbit ddr ii+ sram two-word bu rst architecture (2.5 cycle read latency) with odt document number: 001-58923 rev. ecn no. orig. of change submission date description of change ** 2864051 vkn 01/22/2010 new data sheet. *a 3083280 njy 11/10/2010 changed status from preliminary to final. updated ordering information (updated part numbers) and added ordering code definitions . added acronyms and units of measure . *b 3129624 gnkk 01/06/2011 updated document title to read as ?cy7c2166kv18/cy7c2177kv18/cy7c2168kv18/cy7c2170kv18, 18-mbit ddr ii+ sram two-word burst architecture (2.5 cycle read latency) with odt?. *c 3432608 njy 11/11/2011 updated ordering information (updated part numbers). updated in new template. *d 3594705 njy 04/21/2012 updated features (removed cy7c2166kv18, cy7c2177kv18 related information). updated configurations (removed cy7c2166kv18, cy7c2177kv18 related information). updated functional description (removed cy7c2166kv18, cy7c2177kv18 related information). updated selection guide (removed 500 mhz frequency related information, removed 400 mhz frequency related information for cy7c2168kv18 part, removed 450 mhz frequency related information for cy7c2170kv18 part, removed cy7c2166kv18, cy7c2177kv18 related information). removed logic block diagram ? cy7c2166kv18. removed logic block diagram ? cy7c2177kv18. updated pin configurations (removed cy7c2166kv18, cy7c2177kv18 related information). updated pin definitions (removed cy7c2166kv18, cy7c2177kv18 related information). updated functional overview (removed cy7c2166kv18, cy7c2177kv18 related information). updated truth table (removed cy7c2166kv18, cy7c2177kv18 related information). updated write cycle descriptions (removed cy7c2166kv18 related information). removed write cycle descriptions (corresponding to cy7c2177kv18). updated identification register definitions (removed cy7c2166kv18, cy7c2177kv18 related information). updated operating range (removed industrial temperature range). updated electrical characteristics (updated dc electrical characteristics (removed 500 mhz frequency related information, removed 400 mhz frequency related information for cy7c2168kv18 part, removed 450 mhz frequency related information for cy7c2170kv18 part, removed cy7c2166kv18, cy7c2177kv18 related information). updated switching characteristics (removed 500 mhz frequency related information). updated package diagram (spec 51-85180 (changed revision from *c to *e)). *e 3881157 prit 01/23/2013 updated package diagram : spec 51-85180 ? changed revision from *e to *f. cy7c2168kv18/cy7c2170kv18 document number: 001-58923 rev. *f page 29 of 30 *f 4375211 prit 05/09/2014 updated application example : updated figure 2 . updated thermal resistance : updated values of ? ja parameter. included ? jb parameter and its details. updated in new template. document history page (continued) document title: cy7c2168kv18/cy7c2170kv 18, 18-mbit ddr ii+ sram two-word bu rst architecture (2.5 cycle read latency) with odt document number: 001-58923 rev. ecn no. orig. of change submission date description of change document number: 001-58923 rev. *f revised may 9, 2014 page 30 of 30 qdr rams and quad data rate rams comprise a new family of products developed by cypress, idt, nec, renesas, and samsung. all pr oducts and company names mentioned in this document may be the trademarks of their respective holders. cy7c2168kv18/cy7c2170kv18 ? cypress semiconductor corporation, 2010-2014. the information contained herein is subject to change without notice. cypress s emiconductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress product. nor does it convey or imply any license under patent or other rights. cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement wi th cypress. furthermore, cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. the inclusion of cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies cypress against all charges. any source code (software and/or firmware) is owned by cypress semiconductor corporation (cypress) and is protected by and subj ect to worldwide patent protection (united states and foreign), united states copyright laws and internatio nal treaty provisions. cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the cypress source code and derivative works for the sole purpose of creating custom software and or firmware in su pport of licensee product to be used only in conjunction with a cypress integrated circuit as specified in the applicable agreement. any reproduction, modification, translation, compilation, or repre sentation of this source code except as specified above is prohibited without the express written permission of cypress. disclaimer: cypress makes no warranty of any kind, express or implied, with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose. cypress reserves the right to make changes without further notice to t he materials described herein. cypress does not assume any liability arising out of the application or use of any product or circuit described herein. cypress does not authori ze its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. the inclusion of cypress? prod uct in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies cypress against all charges. use may be limited by and subject to the applicable cypress software license agreement. sales, solutions, and legal information worldwide sales and design support cypress maintains a worldwide network of offices, solution center s, manufacturer?s representatives, and distributors. to find t he office closest to you, visit us at cypress locations . products automotive cypress.co m/go/automotive clocks & buffers cypress.com/go/clocks interface cypress. com/go/interface lighting & power control cypress.com/go/powerpsoc cypress.com/go/plc memory cypress.com/go/memory psoc cypress.com/go/psoc touch sensing cyp ress.com/go/touch usb controllers cypress.com/go/usb wireless/rf cypress.com/go/wireless psoc ? solutions psoc.cypress.com/solutions psoc 1 | psoc 3 | psoc 4 | psoc 5lp cypress developer community community | forums | blogs | video | training technical support cypress.com/go/support |
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